Gallium Nitride Transistor Solutions
The all-in-one workstation is getting sleeker and lighter with every new model. One of the key enablers to this trend are lighter and small form-factor power converters, typically achieved by switching the power converter at a high frequency. High frequency switching leads to smaller and lighter passive components such as transformers, inductors and capacitors. A key impediment for high switching frequency operation is the switching & driving losses of the traditional silicon MOSFETs. GaN HEMTs (Gallium Nitride-High Electron Mobility Transistor) offer low gate charge and on-resistance compared to the traditional MOSFETs enabling high frequency power conversion.
A 240 W reference design is available, providing a complete solution for a 12 V / 20 A all-in-one computer power supply using GaN HEMTs as the switching devices.
Devices also utilized in the design include: