Dual N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5936DU-T1-GE3

RS Stock No.: 818-1356Brand: VishayManufacturers Part No.: SI5936DU-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

10.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3.08mm

Typical Gate Charge @ Vgs

7 nC @ 10 V

Width

1.98mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.85mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

Dual N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5936DU-T1-GE3
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Available in multiples of 20.

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20P.O.A.
40P.O.A.
60P.O.A.
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140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.

P.O.A.

Dual N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5936DU-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20P.O.A.
40P.O.A.
60P.O.A.
80P.O.A.
100P.O.A.
120P.O.A.
140P.O.A.
160P.O.A.
180P.O.A.
200P.O.A.
220P.O.A.
240P.O.A.
260P.O.A.
280P.O.A.
300P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

10.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3.08mm

Typical Gate Charge @ Vgs

7 nC @ 10 V

Width

1.98mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.85mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more