Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
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€ 0.85
Each (In a Pack of 5) (Exc. Vat)
5
€ 0.85
Each (In a Pack of 5) (Exc. Vat)
5
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 0.85 | € 4.25 |
50 - 120 | € 0.773 | € 3.86 |
125 - 245 | € 0.733 | € 3.67 |
250 - 495 | € 0.668 | € 3.34 |
500+ | € 0.612 | € 3.06 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Product details