N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC016N06NSATMA1

RS Stock No.: 906-4325Brand: InfineonManufacturers Part No.: BSC016N06NSATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.4 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

6mm

Typical Gate Charge @ Vgs

71 nC @ 10 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.1mm

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 2.921

Each (In a Pack of 5) (Exc. Vat)

N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC016N06NSATMA1
Select packaging type

€ 2.921

Each (In a Pack of 5) (Exc. Vat)

N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC016N06NSATMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

QuantityUnit pricePer Pack
5 - 45€ 2.921€ 14.60
50 - 120€ 2.629€ 13.15
125 - 245€ 2.454€ 12.27
250 - 495€ 2.279€ 11.40
500+€ 2.104€ 10.52

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.4 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

6mm

Typical Gate Charge @ Vgs

71 nC @ 10 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.1mm

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more