Ask the experts: Focus on Silicon Carbide with DesignSpark
In this, our first DesignSpark 'Ask the expert' session, we have teamed up with ROHM Semiconductor who are leading the way in the development of Silicon Carbide power devices. Find out about ROHM's amazing SiC journey here.
Silicon Carbide (SiC) offers numerous benefits and advantages in power electronics design when compared to silicon. SiC is getting the attention of system designers and power electronic engineers alike, attracted by the characteristics of low loss, higher switching frequencies and improved efficiencies.
We invite you to find out more by asking Christian Felgemacher from ROHM Semiconductor any questions you may have concerning SiC technology.
Questions you submit below will be reviewed and put to Christian during the recorded Q&A session held here at DesignSpark w/c 22nd April; the video will be available the following week.
Christian received his MEng (Hons.) degree in electronics and electrical engineering with management from the University of Edinburgh in 2011 and his Dr.-Ing. degree from the University of Kassel in 2018. From 2012 to 2017 he was a Research Assistant at the Centre of Competence for Distributed Electric Power Technology at the University of Kassel where he focused on reliability aspects of power semiconductors in photovoltaic inverters as well as the utilisation of wide-bandgap devices. Christian joined ROHM Semiconductor in 2018 where he works to support customers in designing in state of the art power semiconductors such as SiC MOSFETs into their power conversion systems.